Graphene/MoSi2X4: A class of van der Waals heterojunctions with unique mechanical and optical properties and controllable electrical contacts-Reference-Cited by-同舟云学术

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Graphene/MoSi2X4: A class of van der Waals heterojunctions with unique mechanical and optical properties and controllable electrical contacts

Published:2023-03 Issue: Volume:614 Page:156095
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Li Z.H.,Han J.N.,Cao S.G.,Zhang Z.H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference88 articles.

1. Two-dimensional semiconductors for transistors;Chhowalla;Nat. Rev. Mater.,2016

2. Electrical contacts to two-dimensional semiconductors;Allain;Nat. Mater.,2015

3. Graphene and two-dimensional materials for silicon technology;Akinwande;Nature,2019

4. Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides;Kim;ACS nano,2017

5. Can a black phosphorus Schottky barrier transistor be good enough?;Quhe;ACS Appl. Mater. Interfaces,2017

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. sp2 to sp3 hybridization transformation in 2D metal-semiconductor contact interface suppresses tunneling barrier and Fermi level pinning simultaneously;Nano Research;2024-08-01

2. Intrinsic Ohmic Contacts and Polarity‐Tunable Schottky Barriers in M₈X₁₂–Graphene (M = Mo, W; X = S, Se) van der Waals Heterostructures for High‐Performance and Bipolar Device Applications;physica status solidi (b);2024-07-27

3. Controllable electrical contact characteristics of graphene/Ga2X3 (X = S, Se) ferroelectric heterojunctions;Applied Physics Letters;2024-07-22

4. Electronic structure and photocatalytic performance of Janus MoSSe/Ga2SSe van der Waals heterostructures;International Journal of Hydrogen Energy;2024-07

5. First-principles study of metal-semiconductor contacts and quantum transport simulations for 5.1-nm monolayer MoSi2N4 devices;Physical Review Applied;2024-05-30

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