First-principles study of metal-semiconductor contacts and quantum transport simulations for 5.1-nm monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Mo</mml:mi><mml:mi>Si</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:mrow><mml:mn>4</mml:mn></mml:msub></mml:math> devices-Reference-Cited by-同舟云学术

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First-principles study of metal-semiconductor contacts and quantum transport simulations for 5.1-nm monolayer MoSi2N4 devices

Published:2024-05-30 Issue:5 Volume:21 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Li Zhanhai¹,Han Jianing¹,Cao Shengguo¹,Zhang Zhenhua¹^ORCID,Deng Xiaoqing¹

Affiliation:

1. Changsha University of Science and Technology

Funder

National Natural Science Foundation of China

Hunan Provincial Natural Science Foundation of China

Postgraduate Scientific Research Innovation Project of Hunan Province, China

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.21.054062/fulltext

Reference75 articles.

1. Two-dimensional semiconductors for transistors

2. Making clean electrical contacts on 2D transition metal dichalcogenides

3. Fermi-level pinning and charge neutrality level in germanium

4. Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

5. Quantum mechanical modeling of magnon-phonon scattering heat transport across three-dimensional ferromagnetic/nonmagnetic interfaces

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles study of metal-semiconductor contacts and quantum transport simulations for 5.1-nm monolayer MoSi2N4 devices;Physical Review Applied;2024-05-30

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