Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
Author:
Affiliation:
1. Device & System Research Center, Samsung Advanced Institute of Technology (SAIT), 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16676, Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b07159
Reference54 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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3. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
4. Low-Temperature Synthesis of Large-Scale Molybdenum Disulfide Thin Films Directly on a Plastic Substrate Using Plasma-Enhanced Chemical Vapor Deposition
5. Single-layer MoS2 transistors
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