Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering-Reference-Cited by-同舟云学术

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Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering

Published:2006-10 Issue:24 Volume:252 Page:8438-8441
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chen Lung-Chien,Lan Wen-How,Lin Ray-Ming,Shen Hue-Tang,Chen Hung-Chang

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

1. GaN, AlN, and InN: A review

2. Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels

3. Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

4. Indium nitride (InN): A review on growth, characterization, and properties

5. Visible emissions near 1.9–2.2eV from hexagonal InN films grown by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

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1. Influence of Cu and Ag doping on structure and optical properties of In2O3 thin film prepared by spray pyrolysis;Results in Physics;2018-09

2. Fabrication of mesoporous In2O3 nanospheres and their ultrasensitive NO2 sensing properties;Sensors and Actuators B: Chemical;2017-09

3. Improved conversion efficiency of InN/p-GaN heterostructure solar cells with embedded InON quantum dots;Applied Physics Letters;2016-02-08

4. Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN;Journal of Applied Physics;2015-10-21

5. Photoresponse comparison of indium oxide (In₂O₃) nanomaterials;SPIE Proceedings;2012-02-09

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