Improved conversion efficiency of InN/p-GaN heterostructure solar cells with embedded InON quantum dots
Author:
Affiliation:
1. Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan
2. Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4941796
Reference27 articles.
1. Efficiency enhancement of InGaN/GaN solar cells with nanostructures
2. High 400 °C operation temperature blue spectrum concentration solar junction in GaInN/GaN
3. High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
4. Design and characterization of GaN∕InGaN solar cells
5. InGaN/GaN multiple quantum well solar cells with long operating wavelengths
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