Dominant near infrared light-emitting diodes based on p-NiO/n-InN heterostructure on SiC substrate
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference27 articles.
1. Origin of the wide band gap from 0.6 to 2.3 eV in photovoltaic material InN: quantum confinement from surface nanostructure;Huang;J. Mater. Chem. A,2016
2. Site-controlled crystalline InN growth from the V-pits of a GaN substrate;Kuo;Appl. Surf. Sci.,2017
3. Pine shaped InN nanostructure growth via vapour transport method by own shadowing and infrared detection;Dwivedi;J. Alloys Compd.,2017
4. Near infrared light-emitting diodes based on n-InN/p-NiO/p-Si heterojunction;Zhao;J. Lumin.,2016
5. Electrically injected near-infrared light emission from single InN nanowire p-i-n diode;Le;Appl. Phys. Lett.,2014
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