Electrically injected near-infrared light emission from single InN nanowire p-i-n diode
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
Funder
Army Research Office (ARO)
Natural Sciences and Engineering Research Council of Canada (Conseil de Recherches en Sciences Naturelles et en Génie du Canada)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4904271
Reference31 articles.
1. When group-III nitrides go infrared: New properties and perspectives
2. Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire
3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
4. Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes
5. Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa1−xN nanowire based light emitting diodes
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