Near infrared light-emitting diodes based on n-InN/p-NiO/p-Si heterojunction-Reference-Cited by-同舟云学术

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Near infrared light-emitting diodes based on n-InN/p-NiO/p-Si heterojunction

Published:2016-05 Issue: Volume:173 Page:1-4
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Zhao Yang,Wang Hui,Wu Guoguang,Jing Qiang,Yang Hang,Gao Fubin,Li Wancheng,Zhang Baolin,Du Guotong

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference28 articles.

1. Transient electron transport in wurtzite GaN, InN, and AlN

2. Unusual properties of the fundamental band gap of InN

3. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

4. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

5. A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE;Applied Physics Letters;2021-04-12

2. Tree-like structures of InN nanoparticles on agminated anodic aluminum oxide by plasma-assisted reactive evaporation;Applied Surface Science;2020-02

3. A molten salt-based nitridation approach for synthesizing nanostructured InN electrode materials;RSC Advances;2020

4. Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers;Semiconductors;2019-10

5. Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures;Scientific Reports;2018-06-21

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