High 400 °C operation temperature blue spectrum concentration solar junction in GaInN/GaN
Author:
Affiliation:
1. Future Chips Constellation and Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Funder
Wellfleet Future Chips Constellation Funds
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4904717
Reference23 articles.
1. Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
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4. Optical band gap in Ga1−xInxN (0
5. Optical bandgap energy of wurtzite InN
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