Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN-Reference-Cited by-同舟云学术

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Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

Published:2015-10-21 Issue:15 Volume:118 Page:155303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ke Wen-Cheng¹,Lee Fang-Wei²,Yang Cheng-Yi¹,Chen Wei-Kuo²,Huang Hao-Ping³

Affiliation:

1. Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan

2. Department of Electrophysics, National Chiao-Tung University, Hsin-Chu 300, Taiwan

3. Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4933273

Reference38 articles.

1. Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p‐In0.15Ga0.85N∕p‐GaN layer

2. Nitride-Based LEDs With an SPS Tunneling Contact Layer and an ITO Transparent Contact

3. Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

4. Improved photovoltaic effects in InGaN-based multiple quantum well solar cell with graphene on indium tin oxide nanodot nodes for transparent and current spreading electrode

5. Graphene transparent electrodes grown by rapid chemical vapor deposition with ultrathin indium tin oxide contact layers for GaN light emitting diodes

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts;Nanoscale Research Letters;2017-07-26

2. Using agglomerated Ag grid to improve the light output of near ultraviolet AlGaN-based light-emitting diode;Microelectronic Engineering;2017-02

3. Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells;physica status solidi (a);2016-11-17

4. Improved conversion efficiency of InN/p-GaN heterostructure solar cells with embedded InON quantum dots;Applied Physics Letters;2016-02-08

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