Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p‐In0.15Ga0.85N∕p‐GaN layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2424320
Reference17 articles.
1. GaN: Processing, defects, and devices
2. Schottky barriers and contact resistances onp‐type GaN
3. Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN
4. Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment
5. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
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