Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes
Author:
Funder
King Abdullah University of Science and Technology
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference35 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. GaN Growth Using GaN Buffer Layer
3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
4. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
5. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
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