Visible emissions near 1.9–2.2eV from hexagonal InN films grown by electron cyclotron resonance plasma-assisted molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Visible emissions near 1.9–2.2eV from hexagonal InN films grown by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

Published:2004-08 Issue:1 Volume:269 Page:145-154
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yodo Tokuo,Kitayama Yasunobu,Miyaki Kazunari,Yona Hiroaki,Harada Yoshiyuki,Prince Kathryn E,Scott K,Butcher A

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Growth and Characterization of InN Heteroepitaxial Layers Grown on Si Substrates by ECR-Assisted MBE

2. Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

3. Optical band gap of indium nitride

4. Unusual properties of the fundamental band gap of InN

5. Optical bandgap energy of wurtzite InN

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1. Luminescence Studies of Er:Ga2O3 Films: Effect of Growth and Annealing Temperatures and Oxygen Pressures;Journal of Nanoscience and Nanotechnology;2018-11-01

2. Nanoindentation responses of InN thin films;Journal of Alloys and Compounds;2014-10

3. Growth and Photoluminescence Studies of High-Density InN Quantum Dots Grown by a Two-Step Alternating Supply of Source Precursors;Science of Advanced Materials;2013-02-01

4. Influence of the GaN capping thickness on the strain and photoluminescence properties of InN/GaN quantum dots;Thin Solid Films;2013-02

5. Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001);Journal of Applied Physics;2011-05

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