Effects of precursors on nucleation in atomic layer deposition of HfO2-Reference-Cited by-同舟云学术

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Effects of precursors on nucleation in atomic layer deposition of HfO2

Published:2004-05 Issue:1-4 Volume:230 Page:292-300
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Aarik Jaan,Aidla Aleks,Kikas Arvo,Käämbre Tanel,Rammula Raul,Ritslaid Peeter,Uustare Teet,Sammelselg Väino

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference25 articles.

1. Control of the Interfacial Layer Thickness in Hafnium Oxide Gate Dielectric Grown by PECVD

2. HfO2 gate dielectric with 0.5 nm equivalent oxide thickness

3. Dielectric property and thermal stability of HfO2 on silicon

4. Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds

5. Deposition of HfO[sub 2] Thin Films in HfI[sub 4]-Based Processes

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth mechanism of HfO2 film on H-terminated Si (100) surface from atomic layer deposition process using tetrakis(ethylmethylamino)hafnium;Surfaces and Interfaces;2024-10

2. Nucleation Delay in Selective Atomic Layer Deposition: Density Functional Insights Coupled Numerical Nucleation Model;The Journal of Physical Chemistry C;2024-06-07

3. Chemisorption and Surface Reaction of Hafnium Precursors on the Hydroxylated Si(100) Surface;Coatings;2023-12-16

4. A theoretical study of the atomic layer deposition of HfO2 on Si(1 0 0) surfaces using tetrakis(ethylmethylamino) hafnium and water;Applied Surface Science;2023-03

5. Role of Oxygen Source on Buried Interfaces in Atomic-Layer- Deposited Ferroelectric Hafnia-Zirconia Thin Films;ACS APPL MATER INTER;2022

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