Control of the Interfacial Layer Thickness in Hafnium Oxide Gate Dielectric Grown by PECVD-Reference-Cited by-同舟云学术

Control of the Interfacial Layer Thickness in Hafnium Oxide Gate Dielectric Grown by PECVD

Published:2003 Issue:4 Volume:150 Page:F75
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Choi Kyu-Jeong,Park Jong-Bong,Yoon Soon-Gil

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Scaling the gate dielectric: Materials, integration, and reliability

2. B. H. Lee, R. Choi, L. Kang, S. Gopalan, R. Nieh, K. Onishi, Y. Jeon, W. Qi, C. Kang, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet., 39 (2000).

3. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

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