Hf1–xZrxO2/ZrO2 Nanolaminate Thin Films as a High-κ Dielectric-Reference-Cited by-同舟云学术

Hf1–xZrxO2/ZrO2 Nanolaminate Thin Films as a High-κ Dielectric

Published:2021-12-13 Issue:12 Volume:3 Page:5632-5640
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kashir Alireza¹²^ORCID,Ghiasabadi Farahani Mehrdad³,Kamba Stanislav²^ORCID,Yadav Manoj¹,Hwang Hyunsang¹

Affiliation:

1. Center for Single Atom-Based Semiconductor Device and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea

2. Institute of Physics of the Czech Academy of Sciences, Prague 18221, Czech Republic

3. Department of Mechanical and Materials Engineering, Queen’s University, Kingston, Ontario K7L 2N8, Canada

Funder

National Research Foundation of Korea

M??MT Project SOLID21

Czech Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c01105

Reference35 articles.

1. The High-k Solution

2. Ferroelectricity in Simple Binary ZrO2 and HfO2

3. Dielectric constant enhancement due to Si incorporation into HfO2

4. Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks

5. New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60nm and below DRAMs

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