Author:
Zheng Yunzhe,Xu Yilin,Sui Fengrui,Gao Zhaomeng,Chen Ju,Guan Zhao,Wei Luqi,Jia Zhenyu,Xin Tianjiao,Wang Yiwei,Liu Cheng,Wang Rui,Zheng Yonghui,Li Chao,Lin Xiaoling,Gong Shijing,Cheng Yan
Funder
Shanghai Municipal Natural Science Foundation
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Reference38 articles.
1. Si-Doped HfO2-Based ferroelectric tunnel junctions with a composite energy barrier for non-volatile memory applications;Lee;Materials,2022
2. HfO2–ZrO2 superlattice ferroelectric field-effect transistor with improved endurance and fatigue recovery performance;Peng;IEEE Trans. Electron. Dev.,2023
3. Superlattice HfO2-ZrO2 based ferro-stack HfZrO2 FeFETs: homogeneous-domain merits ultra-low error, low programming voltage 4 V and robust endurance 109 cycles for multibit NVM;Liao;International Electron Devices Meeting (IEDM),2022
4. Low voltage and high speed 1Xnm 1T1C FE-RAM with ultra-thin 5nm HZO;Sung;IEEE International Electron Devices Meeting (IEDM),2021
5. 3D HfO2 thin film MEMS capacitor with superior energy storage properties;Zhang;Adv. Funct. Mater.,2023