Deposition of HfO[sub 2] Thin Films in HfI[sub 4]-Based Processes-Reference-Cited by-同舟云学术

Deposition of HfO[sub 2] Thin Films in HfI[sub 4]-Based Processes

Published:2002 Issue:10 Volume:149 Page:F139
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Forsgren Katarina,Hårsta Anders,Aarik Jaan,Aidla Aleks,Westlinder Jörgen,Olsson Jörgen

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference23 articles.

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2. Antireflection Coatings For Silicon Charge-Coupled Devices

3. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

4. Thermodynamic stability of binary oxides in contact with silicon

5. P. J. Spencer, O. van Goldbeck, R. Ferro, R. Marazza, K. Girgis, and O. Kubaschewski, inHafnium: Physico-Chemical Properties of Its Compounds and Alloys, K. L. Komarek, Editor, Atomic Energy Review Special Issue No. 8, International Atomic Energy Agency, Vienna (1981).

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