Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
Author:
Affiliation:
1. Department of Physics, University of Ulsan, Ulsan 44610, Korea
2. Air Liquide Korea Co., LTD., Seoul 03722, Korea
3. Department of Material Science Engineering, Incheon National University, Incheon 22012, Korea
Funder
Ministry of Education
Korea Evaluation Institute of Industrial Technology
Ministry of Science, ICT and Future Planning
Ministry of Knowledge Economy
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b05286
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5. Mcdonnell, S.; Brennan, B.; Azcatl, A.; Lu, N.; Dong, H.; Kim, J.; Hinkle, C. L.; Kim, M. J.; Wallace, R. M.HfO on MoS by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability. 2013; pp10354–10361.
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