Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer-Reference-Cited by-同舟云学术

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Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer

Published:2015-11 Issue: Volume:354 Page:148-154
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lin Jyun-Hao,Huang Shyh-Jer,Su Yan-Kuin,Lai Chao-Hsing

Funder

National Science Council and Bureau of Energy, Ministry of Economic Affairs of Taiwan, R.O.C

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference19 articles.

1. Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth

2. Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer

3. Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD

4. Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

5. GaN grown on Si(111) with step-graded AlGaN intermediate layers

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of TMAl predose time on the quality of submicron-thick GaN on Si;Vacuum;2024-08

2. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25

3. Comparison of the AlN and GaN crystalline quality on 2-inch silicon substrate via two growth methods;Journal of Crystal Growth;2020-04

4. Investigation of pattern-orientation on stress in GaN grown on Si(111) substrate in lateral confinement epitaxy;Superlattices and Microstructures;2018-10

5. Zinc-blende MnN bilayer formation on the GaN(111) surface;Superlattices and Microstructures;2017-07

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