Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer-Reference-Cited by-同舟云学术

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Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer

Published:2002-03 Issue:1-3 Volume:236 Page:77-84
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lu Yuan,Liu Xianglin,Lu Da-Cheng,Yuan Hairong,Chen Zhen,Fan Tiwen,Li Yufeng,Han Peide,Wang Xiaohui,Wang Du,Wang Zhanguo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

2. High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

3. High quality GaN–InGaN heterostructures grown on (111) silicon substrates

4. Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer

5. GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy

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1. Characteristics of MAPbI₃ Stacked on the GaN Nanowires‐On‐Glass;Advanced Electronic Materials;2024-05-30

2. Impact of growth conditions on stress and quality of aluminum nitride (AlN) thin buffer layers;physica status solidi (b);2016-04-15

3. Effect of nitridation surface treatment on silicon (1 1 1) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD;Applied Surface Science;2016-01

4. Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer;Applied Surface Science;2015-11

5. Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates;Journal of Crystal Growth;2014-03

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