Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD-Reference-Cited by-同舟云学术

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Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD

Published:2008-12 Issue:12 Volume:39 Page:1710-1713
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Luo Weijun,Wang Xiaoliang,Guo Lunchun,Xiao Hongling,Wang Cuimei,Ran Junxue,Li Jianping,Li Jinmin

Publisher

Elsevier BV

Subject

General Engineering

Reference14 articles.

1. MOVPE growth of GaN on Si(111) substrates

2. Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate

3. AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

4. Evolution of threading dislocations in MOCVD-grown GaN films on (111) Si substrates

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of Epitaxial Structures on GaN-on-Si(111) HEMTs with Step-Graded AlGaN Buffer Layer and AlGaN Back Barrier;Coatings;2024-06-02

2. Investigation into the growth mode of GaN thin films on 4H–SiC substrates via plasma-enhanced atomic layer deposition;Vacuum;2024-03

3. High-quality AlN growth: a detailed study on ammonia flow;Journal of Materials Science: Materials in Electronics;2023-01-25

4. Investigation into the Growth Mode of Gan Thin Films on 4h-Sic Substrates Via Plasma-Enhanced Atomic Layer Deposition;2023

5. Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si*;Chinese Physics B;2021-12-01

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