Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2188383
Reference19 articles.
1. GaN-Based Devices on Si
2. InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition
3. AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates
4. Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy
5. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
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