Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates-Reference-Cited by-同舟云学术

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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Published:2014-07 Issue: Volume:306 Page:89-93
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Dimitrakopulos G.P.,Bazioti C.,Grym J.,Gladkov P.,Hulicius E.,Pangrác J.,Pacherová O.,Komninou Ph.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. Damage of coherent multilayer structures by injection of dislocations or cracks

2. Study of misfit dislocations by EBIC, CL and HRTEM in GaAs/InGaAs lattice-strained multi-quantum well p-i-n solar cells

3. Influence of lattice misfit on heterojunction bipolar transistors with lattice‐mismatched InGaAs bases

4. Optical detection of misfit dislocation‐induced deep levels at InGaAs/GaAs heterojunctions

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1. Strain-Induced Band Gap Variation in InGaN/GaN Short Period Superlattices;Crystals;2023-04-19

2. Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry;Brazilian Journal of Physics;2022-08-24

3. Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications;Optics & Laser Technology;2022-04

4. Surface‐interface analysis of In x Ga 1‐x As/InP heterostructure in positive and negative mismatch system;Surface and Interface Analysis;2019-01-14

5. Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure;Crystals;2017-05-25

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