Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure-Reference-Cited by-同舟云学术

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Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

Published:2017-05-25 Issue:6 Volume:7 Page:155
ISSN:2073-4352
Container-title:Crystals
language:en
Short-container-title:Crystals

Author:

Zhao Liang,Guo Zuoxing,Ding Xiangdong,Li Jingjuan,Yang Shen,Zhang Min,Zhao Lei

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

Link

http://www.mdpi.com/2073-4352/7/6/155/pdf

Reference28 articles.

1. Band parameters for III–V compound semiconductors and their alloys

2. Nanometre-scale electronics with III–V compound semiconductors

3. Extended wavelength SWIR InGaAs focal plane array: Characteristics and limitations

4. A review of InP/InAlAs/InGaAs based transistors for high frequency applications

5. Electronic band structure calculations for biaxially strained Si, Ge, and III–V semiconductors

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