Evolution of the Al2O3/Ge(100) interface for reactively sputter-deposited films submitted to postdeposition anneals-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Evolution of the Al2O3/Ge(100) interface for reactively sputter-deposited films submitted to postdeposition anneals

Published:2012-05 Issue:15 Volume:258 Page:5707-5711
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Bom Nicolau Molina,Soares Gabriel Vieira,Krug Cristiano,Pezzi Rafael Peretti,Baumvol Israel Jacob Rabin,Radtke Claudio

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference22 articles.

1. Ultimate scaling of CMOS logic devices with Ge and III–V materials;Heyns;MRS Bull.,2009

2. Comparison of drive in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs and InAs channels;Lubow;Appl. Phys. Lett.,2010

3. Atomic layer deposition of dielectrics on Ge and III–V materials for ultrahigh performance transistors;Wallace;MRS Bull.,2009

4. High-k/Ge MOSFETs for future nanoelectronics;Kamata;Mater. Today,2008

5. Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices;Van Elshocht;Appl. Phys. Lett.,2006

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Substrate damage in ion-implanted (100) germanium after extended ms flash lamp annealing: Origins and suppression;Materials Science in Semiconductor Processing;2021-02

2. Intramolecular deformation of zeotype-borogermanate toward a three-dimensional porous germanium anode for high-rate lithium storage;Journal of Materials Chemistry A;2018

3. Electrical properties of Ge metal–oxide–semiconductor capacitors with high-kLa2O3gate dielectric incorporated by N or/and Ti;Journal of Semiconductors;2016-06

4. Electrical properties of LaTiO high-k gate dielectric Ge MOS Capacitor and Ti content optimization;Acta Physica Sinica;2016

5. Interfacial Properties of ALD-Deposited Al2O3/p-Type Germanium MOS Structures: Influence of Oxidized Ge Interfacial Layer Dependent on Al2O3 Thickness;ECS Solid State Letters;2012-07-20

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3