Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels-Reference-Cited by-同舟云学术

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Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels

Published:2010-03-22 Issue:12 Volume:96 Page:122105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lubow Abigail,Ismail-Beigi Sohrab,Ma T. P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3367708

Reference3 articles.

1. Silicon Device Scaling to the Sub-10-nm Regime

2. A. Lubow, Ph.D. thesis, Yale University, 2009.

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