Interfacial Properties of ALD-Deposited Al2O3/p-Type Germanium MOS Structures: Influence of Oxidized Ge Interfacial Layer Dependent on Al2O3 Thickness-Reference-Cited by-同舟云学术

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Interfacial Properties of ALD-Deposited Al2O3/p-Type Germanium MOS Structures: Influence of Oxidized Ge Interfacial Layer Dependent on Al2O3 Thickness

Published:2012-07-20 Issue:2 Volume:1 Page:P32-P34
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Botzakaki M.,Kerasidou A.,Sygellou L.,Ioannou-Sougleridis V.,Xanthopoulos N.,Kennou S.,Ladas S.,Vouroutzis N. Z.,Speliotis T.,Skarlatos D.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Post-metallization annealing and photolithography effects in p-type Ge/Al₂O₃/Al MOS structures;ECS Journal of Solid State Science and Technology;2022-04-01

2. Surface passivation of germanium by atomic layer deposited Al2O3 nanolayers;Journal of Materials Research;2021-01-28

3. Thermal conductivity and thermal boundary resistance of amorphous Al2O3 thin films on germanium and sapphire;Journal of Applied Physics;2020-06-28

4. XPS analysis and electrical conduction mechanisms of atomic layer deposition grown Ta2O5 thin films onto p-Si substrates;Journal of Vacuum Science & Technology A;2020-05

5. Interfacial Characterization and Transport Conduction Mechanisms in Al|HfO2|p-Ge Structures: Energy Band Diagram;Semiconductors;2020-05

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