Thermal gas-phase etching of titanium nitride (TiN) by thionyl chloride (SOCl2)-Reference-Cited by-同舟云学术

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Thermal gas-phase etching of titanium nitride (TiN) by thionyl chloride (SOCl2)

Published:2021-02 Issue: Volume:540 Page:148309
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Sharma Varun,Blomberg Tom,Haukka Suvi,Cembella Shaun,Givens Michael E.,Tuominen Marko,Odedra Rajesh,Graff Wes,Ritala Mikko

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference42 articles.

1. Chapter 25 - Vapor Phase Etch Processes for Silicon MEMS;Hammond,2015

2. Overview of atomic layer etching in the semiconductor industry;Kanarik;J. Vacuum Sci. Technol. A,2015

3. Fabrication of MEMS devices by using anhydrous HF gas-phase etching with alcoholic vapor;Jang;J. Micromech. Microeng.,2002

4. Gas-phase etching of SiO2 layers in an HF/C2H5OH mixture;Rudakov;Russ. Microlectron.,2017

5. Prospects for thermal atomic layer etching using sequential, self-limiting fluorination and ligand-exchange reactions;George;ACS Nano,2016

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for atomic layer etching of TiO2 and ZrO2 using tungsten hexafluoride;Journal of Vacuum Science & Technology A;2023-06-20

2. Plasma atomic layer etching for titanium nitride at low temperatures;Journal of Vacuum Science & Technology B;2022-03

3. Reactive grid-assisted co-sputtering of titanium and chromium in a pure nitrogen atmosphere: Uniformity, optics, and structure of the Ti–Cr–N films;Ceramics International;2022-02

4. Combining Experimental and DFT Investigation of the Mechanism Involved in Thermal Etching of Titanium Nitride Using Alternate Exposures of NbF 5 and CCl 4 , or CCl 4 Only;Advanced Materials Interfaces;2021-10-22

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