Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Lee, C.S., Baek, J.T., Yoo, H.J., and Woo, S.I., Modeling and characterization of gas-phase etching of thermal oxide and teos oxide using anhydrous HF and CH3OH, J. Electrochem. Soc., 1996, vol. 143, no. 3, pp. 1099–1103.
2. Miki, H., Kikuyama, H., Kawanabe, I., Miyashita, M., and Ohmi, T., Gas-phase and selective etching of native oxide, IEEE Trans. Electron. Dev., 1990, vol. 37, no. 1, pp. 107–115.
3. Torek, K., Ruzyllo, J., Grant, R., and Novak, R., Reduced pressure etching of thermal oxides in anhydrous Hf/alcoholic gas mixture, J. Electrochem. Soc., 1995, vol. 142, pp. 1322–1326.
4. Chuhg, H.H., Jang, W.I., Lee, C.S., Lee, J.H., and Yoo, H.J., Gas-phase etching of TEOS and PSG sacrafical layers using anhydrous HF and CH3OH, J. Korean Phys. Soc., 1997, vol. 30, no. 3, pp. 628–631.
5. Judge, J., A study of the dissolution of SiO2 in acidic fluoride solutions, J. Electrochem. Soc., 1971, vol. 118, vol. 11, pp. 1772–1775.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献