A unified semi-global surface reaction model of polymer deposition and SiO2 etching in fluorocarbon plasma-Reference-Cited by-同舟云学术

A unified semi-global surface reaction model of polymer deposition and SiO2 etching in fluorocarbon plasma

Published:2020-06 Issue: Volume:515 Page:145975
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chang Won Seok,Yook Yeong Geun,You Hae Sung^ORCID,Park Jae Hyeong,Kwon Deuk Chul,Song Mi Young,Yoon Jung Sik,Kim Dae Woong,You Shin Jae,Yu Dong Hun,Kwon Hyoung-Cheol,Park Sung Kye,Im Yeon Ho

Funder

SK Hynix Inc.

National Research Council of Science and Technology (NST) grant by the Korea government

Ministry of Trade, Industry & Energy

Korea Semiconductor Research Consortium

Korean Institute of Energy Technology Evaluation and Planning

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

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2. High energy electron fluxes in dc-augmented capacitively coupled plasmas. II. Effects on twisting in high aspect ratio etching of dielectrics;Wang;J. Appl. Phys.,2010

3. Mechanism of sidewall necking and bowing in the plasma etching of high aspect-ratio contact holes;Lee;J. Electrochem. Soc.,2010

4. Phenomenological modeling of ion-enhanced surface kinetics in fluorine-based plasma etching;Gray;J. Vac. Sci. Technol. B,1993

5. Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas;Schaepkens;J. Vac. Sci. Technol. B,2000

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2. Investigation into SiO2 Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled;Nanomaterials;2022-12-15

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