Effect of radio frequency bias power on SiO[sub 2] feature etching in inductively coupled fluorocarbon plasmas-Reference-Cited by-同舟云学术

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Effect of radio frequency bias power on SiO[sub 2] feature etching in inductively coupled fluorocarbon plasmas

Published:2000 Issue:2 Volume:18 Page:848
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Schaepkens M.,Oehrlein G. S.,Cook J. M.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantitative control of plasma and surface reactions for dielectric film etching;Japanese Journal of Applied Physics;2022-01-01

2. A unified semi-global surface reaction model of polymer deposition and SiO2 etching in fluorocarbon plasma;Applied Surface Science;2020-06

3. High-rate etching of single oriented AlN films by chlorine-based inductive coupled plasma for vibrational energy harvesters;Journal of Physics: Conference Series;2019-11-01

4. Substrate temperature effect on migration behavior of fluorocarbon film precursors in high-aspect ratio structures;Journal of Vacuum Science & Technology B;2019-05

5. Superhydrophobic and antireflective surface of nanostructures fabricated by CF4 plasma etching;Materials Today: Proceedings;2018

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