High energy electron fluxes in dc-augmented capacitively coupled plasmas. II. Effects on twisting in high aspect ratio etching of dielectrics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3290873
Reference27 articles.
1. Characteristics of Very High-Aspect-Ratio Contact Hole Etching
2. Profile simulation of high aspect ratio contact etch
3. Effects of plasma chamber pressure on the etching of micro structures in SiO/sub 2/ with the charging effects
4. Substrate bias effects in high‐aspect‐ratio SiO2 contact etching using an inductively coupled plasma reactor
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