Kinetics of plasma oxidation of germanium-tin (GeSn)-Reference-Cited by-同舟云学术

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Kinetics of plasma oxidation of germanium-tin (GeSn)

Published:2017-12 Issue: Volume:425 Page:95-99
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Wang Wei,Lei Dian,Dong Yuan,Zhang Zheng,Pan Jisheng,Gong Xiao,Tok Eng-Soon,Yeo Yee-Chia

Funder

National University of Singapore Trailblazer

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference38 articles.

1. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy

2. Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy

3. Electronic band structure and effective mass parameters of Ge1-xSnx alloys

4. New materials for post-Si computing: Ge and GeSn devices

5. Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical and electronic properties of Ge1−xSnx/Si alloys grown by remote plasma-enhanced chemical vapor deposition;Journal of Vacuum Science & Technology B;2024-08-30

2. X-ray photoelectron spectroscopy surface oxidation study of remote plasma-enhanced chemical vapor deposition-grown Ge1−xSnx/Si alloys;Journal of Vacuum Science & Technology B;2024-07-01

3. Oxide Decomposition and Sn Surface Segregation on Core/Shell Ge/GeSn Nanowires;ACS Applied Electronic Materials;2022-11-01

4. Monolithic Germanium-Tin Pedestal Waveguide for Mid-Infrared Applications;IEEE Photonics Journal;2021-04

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