Oxide Decomposition and Sn Surface Segregation on Core/Shell Ge/GeSn Nanowires-Reference-Cited by-同舟云学术

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Oxide Decomposition and Sn Surface Segregation on Core/Shell Ge/GeSn Nanowires

Published:2022-11-01 Issue:11 Volume:4 Page:5406-5412
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Braun Michael R.¹^ORCID,Lentz J. Zach¹^ORCID,Bishnoi Ishaa¹,Meng Andrew C.²^ORCID,Casalena Lee³,Cheng Huikai³,McIntyre Paul C.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

2. Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

3. ThermoFisher Scientific, Hillsboro, Oregon 97124, United States

Funder

Division of Graduate Education

Workforce Development for Teachers and Scientists

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01061

Reference55 articles.

1. Flash lamp annealing processing to improve the performance of high-Sn content GeSn n-MOSFETs

2. Behavior of Sn atoms in GeSn thin films during thermal annealing:Ex-situandin-situobservations

3. In Situ Studies of Germanium-Tin and Silicon-Germanium-Tin Thermal Stability

4. Post-growth annealing of germanium-tin alloys using pulsed excimer laser

5. Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-ray photoelectron spectroscopy surface oxidation study of remote plasma-enhanced chemical vapor deposition-grown Ge1−xSnx/Si alloys;Journal of Vacuum Science & Technology B;2024-07-01

2. Research progress of out-of-plane GeSn nanowires;Nanotechnology;2024-03-26

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