Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
2. Department of Physics, National University of Singapore, Singapore 117551
Funder
Singapore National Research Foundation through the Competitive Research Program
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4922423
Reference50 articles.
1. Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation
2. Strain relaxation and defect formation in heteroepitaxial Si1−xGex films via surface roughening induced by controlled annealing experiments
3. Influence of misfit dislocations on the surface morphology of Si1−xGex films
4. Surface ripples, crosshatch pattern, and dislocation formation: Cooperating mechanisms in lattice mismatch relaxation
5. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
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