Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field-Reference-Cited by-同舟云学术

Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field

Published:2021-09-30 Issue:10 Volume:3 Page:4388-4397
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kondratenko Serhiy¹^ORCID,Lytvyn Petro²³,Kuchuk Andrian²^ORCID,Maia de Oliveira Fernando²⁴,Stanchu Hryhorii²,Lysenko Volodymyr³,Teodoro Marcio D.⁴,Malyuta Serhiy³,Yu Shui-Qing⁵,Mazur Yuriy I.²^ORCID,Salamo Gregory²

Affiliation:

1. Department of Physics, Taras Shevchenko National University of Kyiv, 64 Volodymyrs’ka St., Kyiv 01601, Ukraine

2. Institute for Nano Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States

3. V. E. Lashkaryov Institute of Semiconductors Physics, NAS of Ukraine, 41 pr. Nauki, Kyiv 03028, Ukraine

4. Departamento de Física, Universidade Federal de São Carlos, São Carlos, São Paulo 13565-905, Brazil

5. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States

Funder

Air Force Office of Scientific Research

Coordena????o de Aperfei??oamento de Pessoal de N??vel Superior

National Academy of Sciences of Ukraine

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00561

Reference42 articles.

1. Mid-infrared photonics in silicon and germanium

2. Progress on Germanium–Tin Nanoscale Alloys

3. Experimental Calibration of Sn-Related Varshni Parameters for High Sn Content GeSn Layers

4. Impact of defects on photoexcited carrier relaxation dynamics in GeSn thin films

5. Electrical properties of extended defects in strain relaxed GeSn

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1. Strain-driven anomalous elastic properties of GeSn thin films;Applied Physics Letters;2023-07-10

2. Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction;Applied Surface Science;2022-12