Experimental Calibration of Sn-Related Varshni Parameters for High Sn Content GeSn Layers
Author:
Affiliation:
1. Université Grenoble Alpes; CEA, LETI; F-38000 France
2. Université Grenoble Alpes; CEA, INAC; F-38000 France
Funder
CEA PHARE Photonics
CEA Carnot “Laser GeSn” project
Publisher
Wiley
Subject
General Physics and Astronomy
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/andp.201800396/fullpdf
Reference39 articles.
1. Germanium tin: silicon photonics toward the mid-infrared [Invited]
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3. Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys
4. Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy
5. Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission
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