Electrical properties of extended defects in strain relaxed GeSn-Reference-Cited by-同舟云学术

Electrical properties of extended defects in strain relaxed GeSn

Published:2018-07-09 Issue:2 Volume:113 Page:022102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gupta Somya¹²^ORCID,Simoen Eddy¹³,Loo Roger¹,Shimura Yosuke¹⁴,Porret Clement¹^ORCID,Gencarelli Federica¹,Paredis Kristof¹,Bender Hugo¹,Lauwaert Johan⁵^ORCID,Vrielinck Henk³^ORCID,Heyns Marc¹²

Affiliation:

1. Imec, Kapeldreef 75, Leuven B-3001, Belgium

2. KU Leuven, Leuven B-3001, Belgium

3. Ghent University, Ghent B-9000, Belgium

4. Shizuoka University, Hamamatsu 432-8011, Japan

5. Ghent University, Zwijnaarde B-9052, Belgium

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5034573

Reference30 articles.

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5. Lasing in direct-bandgap GeSn alloy grown on Si

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