Strain relaxation and defect formation in heteroepitaxial Si1−xGex films via surface roughening induced by controlled annealing experiments
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118819
Reference10 articles.
1. Mechanical properties of thin films
2. Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes
3. Stress singularities along a cycloid rough surface
4. Dislocation Nucleation from a Surface CUSP
5. The characteristics of strain-modulated surface undulations formed upon epitaxial Si1−xGex alloy layers on Si
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