Modeling elastic anisotropy in strained heteroepitaxy
Author:
Funder
Science and Engineering Research Board
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://iopscience.iop.org/article/10.1088/1361-648X/aa76c6/pdf
Reference75 articles.
1. Beyond the heteroepitaxial quantum dot: Self-assembling complex nanostructures controlled by strain and growth kinetics
2. Extended shape evolution of low mismatch Si1−xGex alloy islands on Si(100)
3. Growth mechanisms of SiGe on (111) and (100) Si substrates
4. SiGe Coherent Islanding and Stress Relaxation in the High Mobility Regime
5. Morphological instability in epitaxially strained dislocation-free solid films
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