Behavior of Sn atoms in GeSn thin films during thermal annealing:Ex-situandin-situobservations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973121
Reference31 articles.
1. Growth and applications of GeSn-related group-IV semiconductor materials
2. Versatile buffer layer architectures based on Ge1−xSnx alloys
3. Constitution of Binary Alloys
4. Single Crystalline GeSn on Silicon by Solid Phase Crystallization
5. Tensile strained GeSn on Si by solid phase epitaxy
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