Post-growth annealing of germanium-tin alloys using pulsed excimer laser-Reference-Cited by-同舟云学术

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Post-growth annealing of germanium-tin alloys using pulsed excimer laser

Published:2015-07-14 Issue:2 Volume:118 Page:025701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wang Lanxiang¹,Wang Wei¹,Zhou Qian¹,Pan Jisheng²,Zhang Zheng²,Tok Eng Soon³,Yeo Yee-Chia¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117582

2. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore 117602

3. Department of Physics, National University of Singapore, Singapore 117551

Funder

National Research Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4926484

Reference69 articles.

1. Growth of single-crystal metastable Ge1-xSnx alloys on Ge(100) and GaAs(100) substrates

2. Epitaxial growth of metastable SnGe alloys

3. Molecular beam epitaxy of metastable, diamond structure SnxGe1−xalloys

4. Molecular-beam epitaxial growth of metastable Ge1−xSnx alloys

5. Synthesis of epitaxial SnxGe1−x alloy films by ion‐assisted molecular beam epitaxy

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2. Nanosecond laser annealing of pseudomorphic GeSn layers: Impact of Sn content;Materials Science in Semiconductor Processing;2023-08

3. High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering;Advanced Science;2023-04-18

4. Oxide Decomposition and Sn Surface Segregation on Core/Shell Ge/GeSn Nanowires;ACS Applied Electronic Materials;2022-11-01

5. Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing;Journal of Alloys and Compounds;2022-05

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