Characterizing SIMS transient effects apparent in matrix secondary ion signals from silicon under 1keV Cs+ impact
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference5 articles.
1. Sputtering by Particle Bombardment. Part III;Yu,1991
2. Transient effects in ultra shallow depth profiling of silicon by secondary ion mass spectrometry
3. Secondary ion formation/survival during the initial stages of sputtering Si and SiO2 with Cs+
4. A systematic study of the surface roughening and sputter rate variations occurring during SIMS ultrashallow depth profile analysis of Si with Cs+
5. Film thickness measurements of SiO2 by XPS
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Charge attachment induced transport – bulk and grain boundary diffusion of potassium in PrMnO3;Physical Chemistry Chemical Physics;2017
2. Storing matter technique performed in the analytical chamber of a quadrupole SIMS analyser;Surface and Interface Analysis;2014-09-30
3. Oxidation effect on the SIMS analysis of samples sputtered and deposited by the Storing Matter technique;Applied Surface Science;2012-05
4. Application of the storing matter technique to the analysis of boron doped and implanted SiO2/Si;Applied Surface Science;2012-03
5. Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3