A systematic study of the surface roughening and sputter rate variations occurring during SIMS ultrashallow depth profile analysis of Si with Cs+-Reference-Cited by-同舟云学术

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A systematic study of the surface roughening and sputter rate variations occurring during SIMS ultrashallow depth profile analysis of Si with Cs+

Published:2003-02 Issue:2 Volume:201 Page:413-425
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

van der Heide P.A.W.,Lim M.S.,Perry S.S.,Bennett J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference48 articles.

1. Ultra shallow doping profiling with SIMS

2. Analysis of Microelectronic Materials and Devices;Janssen,1991

3. Secondary Ion Mass Spectrometry: A Practical Handbook, for Depth Profiling and Bulk Impurity Analysis;Wilson,1989

4. M. Mellier-Smith, A.C. Diebold, in: Proceedings of the International Conference on Characterization and Metrology for ULSI Technology, 1998, p. 3

5. A.C. Diebold, K.A. Monahan, National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 1997, p. 179

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