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Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

  • Published:2016-12 Issue: Volume:390 Page:870-881
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Henegar Dr. A.J.,Gougousi Prof. T.

Funder

National Science Foundation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Defect Engineering of MoS2 for Atomic Layer Deposition of TiO2 Films;ACS Applied Materials & Interfaces;2020-09-24

2. Repairing the surface of InAs-based topological heterostructures;Journal of Applied Physics;2020-09-21

3. Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing;ACS Applied Materials & Interfaces;2018-12-03

4. Atomic layer deposition of Al2O3 and TiO2 on MoS2 surfaces;Journal of Vacuum Science & Technology A;2018-11

5. Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces;Progress in Crystal Growth and Characterization of Materials;2016-12
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