Surface Defect Engineering of MoS2 for Atomic Layer Deposition of TiO2 Films
Author:
Affiliation:
1. Department of Physics, UMBC, Baltimore, Maryland 21250, United States
2. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
Funder
Office of Naval Research
U.S. Department of Education
Division of Electrical, Communications and Cyber Systems
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c13095
Reference63 articles.
1. Atomically ThinMoS2: A New Direct-Gap Semiconductor
2. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
3. Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition
4. Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
5. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
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