Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering-Reference-Cited by-同舟云学术

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Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

Published:2015-11 Issue: Volume:354 Page:298-305
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Cristea D.,Crisan A.,Cretu N.,Borges J.,Lopes C.,Cunha L.,Ion V.,Dinescu M.,Barradas N.P.,Alves E.,Apreutesei M.,Munteanu D.

Funder

FEDER

Portuguese Foundation for Science and Technology

European Social Fund

Romanian Government

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference28 articles.

1. The impact of sputter conditions on the microstructure and on the resistivity of tantalum thin films

2. Effects of deposition parameters on tantalum films deposited by direct current magnetron sputtering

3. Characteristics of ultrathin Ta and TaN films

4. Texture and phase transformation of sputter-deposited metastable Ta films and multilayers

5. The O-Ta (Oxygen-Tantalum) system

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