The influence of strain on the diffusion of Si dimers on Si(001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference28 articles.
1. Vacancy-Vacancy Interaction on Ge-Covered Si(001)
2. Reversal of Step Roughness on Ge-Covered Vicinal Si(001)
3. Surface stress and interface formation
4. An Atomic-Level View of Kinetic and Thermodynamic Influences in the Growth of Thin Films
5. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
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3. Kinetic Monte Carlo simulations of three-dimensional self-assembled quantum dot islands;Chinese Physics B;2014-01
4. The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy;Journal of Physics: Condensed Matter;2013-09-03
5. Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-11
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