Reversal of Step Roughness on Ge-Covered Vicinal Si(001)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.74.574/fulltext
Reference17 articles.
1. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface
2. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
4. Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon
5. Si(001) Dimer Structure Observed with Scanning Tunneling Microscopy
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1. Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands;Semiconductors;2018-03
2. Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism;Advances in Semiconductor Nanostructures;2017
3. Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study;Applied Surface Science;2017-01
4. Three-dimensional nanostructures on Ge/Si(100) wetting layers: Hillocks and pre-quantum dots;Journal of Applied Physics;2016-05-28
5. Understanding the early stages of growth of Ge on Si(001) from lattice based simulations;Surface Science;2015-09
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